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2SK2220, 2SK2221
Silicon N Channel MOS FET
REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
* * * * * * * High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Source (Flange) 3. Drain
1
2
S 3
Rev.2.00 Sep 07, 2005 page 1 of 5
2SK2220, 2SK2221
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage 2SK2220 2SK2221 Symbol VDSX VGSS ID IDR Pch*1 Tch Tstg Ratings 180 200 20 8 8 100 150 -55 to +150 Unit V V A A W
Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25C
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage 2SK2220 2SK2221 Gate to source breakdown voltage Gate to source cutoff voltage Drain to source saturation voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note: 2. Pulse Test Symbol V(BR)DSX V(BR)GSS VGS(off) VDS(sat) |yfs| Ciss Coss Crss ton toff Min 180 200 20 0.15 -- 0.7 -- -- -- -- -- Typ -- -- -- -- -- 1.0 600 800 8 250 90 Max -- -- -- 1.45 12 1.4 -- -- -- -- -- Unit V V V V S pF pF pF ns ns Test conditions ID = 10 mA, VGS = -10 V IG = 100 A, VDS = 0 ID = 100 mA, VDS = 10 V ID = 8 A, VGD = 0 V*2 ID = 3 A, VDS = 10 V*2 VGS = -5 V, VDS = 10 V, f = 1 MHz VDD = 30 V, ID = 4 A
Rev.2.00 Sep 07, 2005 page 2 of 5
2SK2220, 2SK2221
Main Characteristics
Power vs. Temperature Derating
150
20 Ta = 25C 10
Maximum Safe Operation Area
Channel Dissipation Pch (W)
PW = PW
Drain Current ID (A)
10
100
5
D C
m s
= 10 0 m s
pe O ra
(1 o Sh
n tio
(1
2 1.0 0.5
t)
o Sh t)
= (T C 25
50
2SK2220
C
)
2SK2221
0
50
100
150
0.2 5 10 20 50 100 200 500
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 VGS = 10 V 9 8 7 6 6 5 4 4 3 2 2 0 0 10 20 30 40 1 50 0 Pch = 125 W TC = 25C 10
Typical Output Characteristics
TC = 25C 9 7 6 6 5 4 4 3 2 1 2 4 6 8 0 10 VGS = 10 V 8
Drain Current ID (A)
Drain Current ID (A)
8
8
2
Drain to Source Voltage VDS (V)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
10 VDS = 10 V 1.0
Typical Transfer Characteristics
25 C
Drain Current ID (A)
Drain Current ID (A)
=-
25
25 =-
0.4 0.2 0 0.4 0.8
C
T
1.2
C
8
0.8
VDS = 10 V
TC
6
75
0.6
4
2
0
2
4
6
8
10
1.6
75
2.0
Gate to Source Voltage VGS (V)
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 5
25
2SK2220, 2SK2221
Forward Transfer Admittance vs. Frequency
5 500
Forward Transfer Admittance yfs (S)
Switching Time vs. Drain Current
Switching Time t on, t off (ns)
1.0
t on 200 100 50
0.1
TC = 25C VDS = 10 V ID = 2 A
t off
0.01
20 10 5 0.1
0.001 0.0005 2k
10 k
100 k
1M
10 M 20 M
0.2
0.5
1.0
2
5
10
Frequency f (Hz)
Drain Current ID (A)
Switching Time Test Circuit
Output
RL Input 10% t on
Waveforms
90%
Input
t off 10% Output 90%
PW = 50 s duty ratio = 1%
30 V 50
Rev.2.00 Sep 07, 2005 page 4 of 5
2SK2220, 2SK2221
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P / TO-3PV
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK2220-E 2SK2221-E Quantity 360 pcs 360 pcs Box (Tube) Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 5 of 5
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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